(Hong Kong)
Product Summary
The EM639165TS-7G SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). The EM639165TS-7G provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option.
Parametrics
Absolute maximum ratings: (1)VIN, VOUT, Input, Output Voltage: - 1.0 ~ 4.6 V ; (2)VDD, VDDQ, Power Supply Voltage: -1.0 ~ 4.6 V; (3)TA, Operating Temperature: 0 ~ 70 ℃; (4)TSTG, Storage Temperature/; - 55 ~ 125 ℃; (5)TSOLDER, Soldering Temperature (10 second): 260 ℃; (6)PD, Power Dissipation: 1 W; (7)IOUT, Short Circuit Output Current: 50 mA.
Features
Features: (1)Fast access time from clock: 5.4/5 ns; (2)Fast clock rate: 143/166MHz; (3)Fully synchronous operation; (4)Internal pipelined architecture; (5)2M word x 16-bit x 4-bank; (6)Programmable Mode registers: CAS Latency: 2, or 3; Burst Length: 1, 2, 4, 8, or full page; Burst Type: interleaved or linear burst; Burst stop function; (7)Auto Refresh and Self Refresh; (8)4096 refresh cycles/64ms; (9)CKE power down mode; (10)Single +3.3V power supply; (11)Interface: LVTTL; (12)54-pin 400 mil plastic TSOP II package: Pb free and Halogen free; (13)54-Ball, 8.0 mm x 8.0 mm TFBGA package: Pb free.
Diagrams
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